Recent press releases issued by Gigaphoton and event information in which Gigaphoton will participate.

Press Releases

December 3, 2007

GIGAPHOTON UNVEILS NEW ArF EXCIMER LASER, THE GT62A
Latest Addition to GT Family of ArF Light Sources Delivers World's Highest Output of 90 Watts and Offers Significantly Reduced Downtime and Maintenance Costs

Oyama, Japan, December 03, 2007 – Gigaphoton Inc., a major lithography light source manufacturer for the global semiconductor industry, has unveiled the newest addition to its argon fluoride (ArF) excimer laser light source portfolio, the GT62A. With an emission wavelength of 193 nm, output of 90 W and repetition rate of 6,000 Hz, the GT62A is designed for double-patterning immersion lithography tools. Having successfully completed testing, Gigaphoton expects the GT62A to be integrated into immersion lithography tools for production at major global semiconductor manufacturers beginning mid-2008.
More

Photos available for downloading:
  GT62A Photo1 (Jpeg, 523KB)
  GT62A Photo2 (Jpeg, 436KB)

December 3, 2007

TOSHIBA SELECTS GIGAPHOTON'S MOST ADVANCED EXCIMER LASER,
THE GT61A, FOR HIGH-VOLUME PRODUCTION OF NAND FLASH MEMORY DEVICES
Leading-Edge Laser Light Source to be Used for Immersion Lithography at Chipmaker's Yokkaichi Fab

Oyama, Japan, December 03, 2007 – Gigaphoton Inc., a major lithography light source manufacturer for the global semiconductor industry, today announced that its latest ArF excimer laser light source for immersion lithography, the GT61A, has been installed at Toshiba’s Yokkaichi, Japan fab for use in high-volume production of NAND flash memory devices.
More

September 28, 2007

GIGAPHOTON'S GT61A EXCIMER LASER LEVERAGED AT MAJOR KOREAN CHIP MAKER FOR USE IN NEXT-GENERATION IMMERSION LITHOGRAPHY APPLICATIONS

OYAMA, Japan, September 28, 2007 — Gigaphoton Inc., a major lithography light source manufacturer for the global semiconductor industry, today announced that a state-of-the-art immersion lithography tool featuring Gigaphoton's latest GT61A argon fluoride (ArF) excimer laser light source has been installed at a major Korean chip maker for use in leading-edge process technology development. The company expects to ramp the tool into high-volume production by the end of this year.
More

JUNE 28, 2007

GIGAPHOTON ANNOUNCES 500^TH MILESTONE INSTALLATION OF ADVANCED ArF LIGHT SOURCE AT SAMSUNG
Underscores Growing Industry Adoption of Company’s Technology For Tackling Next-Generation Lithography Applications

OYAMA, JAPAN, JUNE 28, 2007 — Gigaphoton Inc., a major lithography light source manufacturer for the global semiconductor industry, today announced the installation of its 500th excimer laser light source at Samsung Electronics Co., Ltd. Today's achievement underscores the industry's continued adoption of Gigaphoton's light source technology as essential for addressing next-generation lithography applications. The milestone installation is for Gigaphoton's GT40A, which was integrated into one of its OEM customers' state-of-the-art ArF lithography tools.
More

January 31, 2007

GIGAPHOTON OPENS STATE-OF-THE-ART FACILITY AT HEADQUARTERS CAMPUS
Serving Myriad Functions, New Building Set to Increase Productivity and Enhance Customer Support Capabilities

OYAMA, Japan, January 31, 2007 — Gigaphoton Inc., a major lithography light source manufacturer for the global semiconductor industry, announced today that it has completed construction of a new building at its headquarters campus.  Slated to open February 1, this new facility will house a state-of-the-art, Class-1,000 cleanroom that features expanded research and development capabilities and laser light source maintenance training for field service engineers.  With training and R&D transitioned to the new facility, the existing building will now be fully dedicated to production of Gigaphoton’s advanced laser systems.  This will enable Gigaphoton to nearly double its manufacturing capability as early as April.
More

 

Event Information

Gigaphoton Seminar

We will hold a private seminar on “Challenges in High-End Lithography and Solutions from the Light Source” along with our exhibit at Semicon Japan 2007. Leading engineer from the world's major semiconductor device manufacturer will make a presentation on the leading edge of lithography technologies as well as the Gigaphoton’s solutions in technologies and products.

When:	15:00 - 17:00, December 7 (Fri.), 2007 (followed by a dinner party)
Where:	“Makuhari Hall”, Tokyo Bay Makuhari
Seminar:	“Challenges in High-End Lithography and Solutions from the Light Source”

Agenda (simultaneous interpretation will be provided)
15:00-15:15	“Opening Remarks” by Dr. Yuji Watanabe, Representative Director and President, Gigaphoton Inc.
15:15-15:45	Toshiba’s Lithography Strategy and its Requirements for Light Source Dr. Tatsuhiko Higashiki Senior Manager Advance ULSI Process Engineering Dept. II Process & Manufacturing Engineering Center Toshiba Corporation Semiconductor Company
15:45-16:15	Current Status of EUV Lithography Dr Goo, Doohoon Senior Engineer, Semiconductor Business Samsung Electronics Co., Ltd
16:15-16:40	EUV Light Source Development with focus on LPP Dr. Akira Sumitani General Research Manager Light Source Laboratory EUVA
16:40-17:00	Gigaphoton DUV Laser Roadmap Hirotoshi Inoue Marketing Division Gigaphoton Inc.
17:00 -	Dinner Party

Seminar Contact
Yutatsu Matsui, Sales Division, Gigaphoton Inc.,
TEL: +81-285-28-8415, FAX: +81-285-28-8439

Semicon Japan 2007

Gigaphoton will make a presentation at Semicon Japan 2007, to be held in Makuhari Messe (Nihon Convention Center) from December 5 through 7, and will introduce our major products and services. Please visit booth 4D-719.

MARCH 19, 2007

Hot News from SPIE Advanced Lithography 2007
Gigaphoton "Steals the Show" at SPIE Paper Presentation

At the "SPIE Advanced Lithography 2007", held February 25 (Sun.) through March 2 (Fri.) in San Jose , California , USA , Gigaphoton presented papers related to its 6-kHz injection-locking ArF excimer laser model "GT61A." This model was designed for the world's first hyper N.A. immersion lithography tools and the EUV light source being developed as an EUVA member. Gigaphoton's leading-edge technologies were spotlighted at SPIE and became the target of attention of researchers and industry insiders from all over the world.

• Ultra Line Narrowed Injection-Locking Laser Light Source "GT61A" for Hyper N.A. Immersion Lithography Tools Demonstrates Spectrum Performance of 0.3 pm or Less under Stabilized Control
  >> Paper,Presentation Material SPIE 6520-75
  
• 40-W EUV Power Demonstrated; Equivalent to Throughput of 40 Wafers/Hour (Achieved as an EUVA Activity)
  >> Paper,Presentation Material SPIE 6517-23
  
• Mitigation of Debris Generated by CO2 Laser Produced Sn Plasma, Reducing Running Cost and Increasing Mirror Life(Achieved as an EUVA Activity)
  >> Paper,Poster SPIE 6517-123
  
• Field-Proven Reliability of High-Power Injection-Locking 6-kHz/60-W ArF Laser Model "GT60A"
  >> Paper,Poster SPIE 6520-111
  
• Small Field Exposure Tool (SFET) Light Source Developed by Gigaphoton (Achieved as an EUVA Activity)
  >> Paper,Presentation Material SPIE 6517-124

Gigaphoton at SPIE Advanced Lithography 2007

Gigaphoton will present the following paper at the "SPIE Advanced Lithography 2007", to be held on February 25 (Sun.) through March 2 (Fri.), 2007, at the San Jose McEnery Convention Center and San Jose Marriot (Headquarters Hotel) in San Jose, California, USA (including ones under EUVA):

■ Paper  Wednesday 28 February, 8:00 am - 8:20 am, Session 6

Laser-produced EUV light source development for HVM, A. Endo, H. Hoshino, T. Ariga, T. Miura, Y. Ueno, M. Nakano, T. Asayama, H. Komori, G. Soumagne, H. Mizoguchi, A. Sumitani, K. Toyoda, Extreme Ultraviolet Lithography System Development Association ( Japan ) [6517-23]

■ Posters  Thursday 1 March, 5:30 pm - 8:00 pm

Reliable high-power injection locked 6kHz 60W laser for ArF immersion lithography, H. Watanabe, S. Komae, R. Nohdomi, T. Yamazaki, H. Nakarai, J. Fujimoto, Gigaphoton Inc. ( Japan ); T. Matsunaga, K. Kakizaki, Komatsu Ltd. ( Japan ); H. Mizoguchi, Gigaphoton Inc. ( Japan ) [6520-111]
CO₂ laser and Sn-droplet target development for EUVL, A. Endo, H. Hoshino, T. Ariga, T. Miura, Y. Ueno, M. Nakano, T. Asayama, H. Komori, G. Soumagne, H. Mizoguchi, A. Sumitani, K. Toyoda, Extreme Ultraviolet Lithography System Development Association (Japan) [6517-122]
Characterization of various Sn targets with respect to debris and fast ion generation, Y. Ueno, H. Hoshino, T. Ariga, T. Miura, M. Nakano, H. Komori, G. Soumagne, A. Endo, H. Mizoguchi, A. Sumitani, K. Toyoda, Extreme Ultraviolet Lithography System Development Association (Japan) [6517-123]
Small field exposure tool (SFET) light source, T. Abe, T. Suganuma, M. Moriya, T. Yabu, T. Asayama, H. Someya, Y. Ueno, G. Soumagne, A. Sumitani, H. Mizoguchi, Extreme Ultraviolet Lithography System Development Association ( Japan ) [6517-124]

■ Paper  Friday 2 March, 11:35 am - 11:55 am, Session 15

Ultra-narrowed injection lock laser light source for higher NA ArF immersion lithography tool, M. Shimbori, Ushio Inc. ( Japan ); T. Matsunaga, T. Suzuki, K. Kakizaki, Komatsu Ltd. ( Japan ); S. Tanaka, M. Yoshino, Gigaphoton Inc. ( Japan ); T. Kumazaki, S. Nagai, Y. Kawasuji, H. Umeda, Komatsu Ltd. ( Japan ); H. Nagano, Y. Sasaki, Ushio Inc. ( Japan ); H. Taniguchi, H. Mizoguchi, Gigaphoton Inc. ( Japan ) [6520-75]

 

In addition, Gigaphoton will exhibit its major products, such as the latest ArF excimer laser model "GT61A," at booth (#200).