Gigaphoton at SPIE Advanced Lithography 2012

Gigaphoton will present the paper at the "SPIE Advanced Lithography 2012", to be held on February 12 (Sun.) through 16 (Thu.), 2012, at the San Jose McEnery Convention Center and San Jose Marriot (Headquarters Hotel) in San Jose, California, USA.

Oral Presentation, Tuesday 14 February 10:30 AM – 10:50 AM

Development of laser-produced plasma-based EUV light source technology for HVM EUV lithography
Paper 8322-14
Time: 10:30 AM – 10:50 AM
Author(s): Junichi Fujimoto, Gigaphoton Inc. (Japan); Tsukasa Hori, Takeshi Ohta, Yasufumi Kawasuji, Yutaka Shiraishi, Tamotsu Abe, Takeshi Kodama, Tatsuya Yanagida, Hiroaki Nakarai, Taku Yamazaki, Komatsu Ltd. (Japan); Hakaru Mizoguchi, Gigaphoton Inc. (Japan)


LPP-EUV light source is expected to be used for next generation lithography. We have several engineering data from our test tools, which include: 20W average clean power with 2.5% CE and 7 hours of operating time; the maximum of 4.8% CE, 93% Sn ionization rate, and 98% Sn debris mitigation by a magnetic field. Based on these data we are developing our first light source for HVM: "GL200E." The latest data and the overview of EUV light source for the HVM EUVL are reviewed in this paper. Part of this work was supported by NEDO.

Posters, Wednesday 15 February, 6:00 PM – 8:00 PM

Development of the reliable high-power pulsed carbon dioxide laser system for LPP EUV light source
Paper 8322-94
Author(s): Takeshi Ohta, Gigaphoton Inc. (Japan)


Laser Produced Plasma (LPP) Extreme Ultra Violet (EUV) light source is expecting for next generation lithography. Because the power scalability (>250W) is promising compare with other scheme. To realize such performance for industrial use, the main driver laser is one of the key components. Our source is using high power pulsed carbon dioxide (CO2) laser as a driver. Multiline amplification of CO2 laser is efficient to increase the extraction efficiency in the case of short pulse amplification. The optical stability such as vibration and thermal distortion of optics should be suppressed at 20kW output level. The latest results are shown in the conference.
A part of this work was supported by the New Energy and Industrial Technology Development Organization (NEDO).

Oral Presentatio, Thursday 16 February, 3:50 PM – 4:10 PM

A reliable higher power ArF laser with afvanced functionality for immersion lithography
Paper 8326-51
Time: 3:50 PM – 4:10 PM
Author(s): Akihiko Kurosu, Masaki Nakano, Masanori Yashiro, Masaya Yoshino, Hiroaki Tsushima, Hiroyuki Masuda, Takahito Kumazaki, Shinichi Matsumoto, Kouji Kakizaki, Takashi Matsunaga, Junichi Fujimoto, Hakaru Mizoguchi, Gigaphoton Inc. (Japan)


For the micro-fabrication at the 32nm node and beyond and until EUV lithography is ready, double patterning lithography using ArF laser is considered to be a strong candidate. The new laser inherits the performance of GT62A-1SxE and realizes higher Reliability, Availability and Maintainability as well as meets a latest illumination enhancement technology. The three innovative technologies are employed on the new laser. The first one is new chamber technology. The second one is advanced gas management technology. The third one is advanced monitoring and self-diagnostic system. We achieved higher Reliability Availability and Maintainability by these technologies. These technologies and performance data are shown in our report.