2018

- SPIE Advanced Lithography 2018 -

• Extreamely long life excimer laser technology for multi-patterning lithography
• High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing
• Improvement of conversion efficiency of DUV light generation at 221-nm using CLBO crystal
• Key components development progress updates of the 250W high-power LPP-EUV light source
• Next-generation ArF Laser technologies for multiple-patterning immersion lithography

2017

-EUV-FEL Workshop-

• 193nm High-Power Laser for Drilling with High Aspect Ratio into Wide Bandgap Materials

-Laser Institute of America-

• High Power LPP-EUV Source with Long Collector mirror Lifetime for High Volime Semiconductor Manufacturing

-SEMICON JAPAN　2017-

• HIGH POWER LPP-EUV SOURCE WITH LONG COLLECTOR MIRROR LIFETIME FOR HIGH VOLUME SEMICONDUCTOR MANUFACTURING

- IWAPS 2017 (International Workshop on Advanced Patterning Solutions) -

• PRESENT STATUS OF HIGH-POWER LPP-EUV SOURCE FOR HVM Presentation

- SPIE Advanced Lithography 2017 -

• LPP-EUV light source for HVM lithography
• Performance of 250W high-power HVM LPP-EUV source
• Key components technology update of the 250W high-power LPP-EUV light source
• High-power LPP-EUV source with long collector mirror lifetime for high volume semiconductor manufacturing
• Highly-efficient high-power pulsed CO2 laser characterized by transverse-flow laser amplifiers
• Excimer laser gas usage reduction technology for semiconductor manufacturing
• DUV high power lasers processing for glass and CFRP
• Devlopment of next-generation Arf excimr laser with ultra-narrow stable spectral bandwith for multiple patterning immersion lithography
• Development of 250W EUV light source for HVM lithography
• 193nm high power lasers for the wide bandgap material processing

2016
- SPIE Advanced Lithography 2016 -

• The next-generation ArF excimer laser for multiple-patterning immersion lithography with helium free operation
• The ArF laser for the next-generation multiple-patterning immersion lithography supporting green operations
• Performance of new high-power HVM LPP-EUV source
• Key components development progress updates of the 250W high power LPP-EUV light source
• High power DUV lasers for material processing
• 100W EUV light-source key component technology update for HVM

2015
- SPIE Advanced Lithography 2015 -

• Performance of one hundred watt HVM LPP-EUV source
• New robust and highly customizable light source management system
• Green solution 120W ArF immersion light source supporting the next-generation multiple-pattering lithography
• Extending green technology innovations to enable greener fabs
• 120W ArF laser with high-wavelength stability and efficiency for the next-generation multiple-patterning immersion lithography

2014
- SPIE Advanced Lithography 2014 -

• Technology for monitoring shot-level light source performance data to achieve high-optimization of lithography processes
• Extremely long life and low-cost 193nm excimer laser chamber technology for 450mm wafer multipatterning lithography
• Advanced excimer technologies enable green semiconductor manufacturing

2013
- SPIE Advanced Lithography 2013 -

• Performance of one hundred watt HVM LPP-EUV source
• LPP-EUV light source development for high volume manufacturing lithography

2012
- SPIE Advanced Lithography 2012 -

• Power up 120 Watt injection-locked ArF excimer laser required for both multi-patterning and 450 mm wafer lithography
• Laser-produced plasma-based extreme-ultraviolet light source technology for high-volume manufacturing extreme-ultraviolet lithography
• Development of the reliable high power pulsed carbon dioxide laser system for LPP EUV light source
• Development of laser-produced plasma-based EUV light source technology for HVM EUV lithography

• Development of laser-produced plasma based EUV light source technology for HVM EUV lithography. Presentation / Manuscript
• Development of the reliable high power pulsed carbon dioxide laser system for LPP EUV light source. Presentation / Manuscript
• A Reliable Higher Power ArF Laser with Advanced Functionality for Immersion Lithography. Presentation / Manuscript

2011

- 2011 International Symposia on Extreme Ultraviolet Lithography and Lithography Extensions -

• Performance of Bandwidth Tuning Laser for Focus Drilling.
• Development of LPP-EUV source forHVM EUVL.
• Investigation on high conversion efficiency and Tin debris mitigation for laser produced plasma EUV light source.

- SPIE Advanced Lithography 2011 -

• 100W 1st generation Laser-Produced Plasma source system for HVM EUV lithography. Presentation / Manuscript
• Development of the reliable 20 kW Class Pulsed Carbon Dioxide Laser System for LPP EUV Light Source. Presentation / Manuscript
• Characterization and Optimization of Tin Particle Mitigation and EUV Conversion Efficiency in a Laser Produced Plasma EUV Light Source.Presentation / Manuscript
• Ecology and High Durability Injection Locked Laser with Flexible Power for Double patterning ArF Immersion Lithography. Presentation / Manuscript

2010

- EUV Symposium 2010 -

• 1st generation Laser-Produced Plasma 100W source system for HVM EUV lithography. (PDF)
• Investigation on high conversion efficiency and Tin debris mitigation for laser produced plasma EUV light source.(PDF)
• Improving efficiency of pulsed CO2Laser system for LPP EUV light source. (PDF)

- SPIE Advanced Lithography 2010 -

• 1st generation Laser-Produced Plasma source system for HVM EUV lithography. (PDF)
• Present status of laser-produced plasma EUV light source. (PDF)
• Flexible and reliable high power injection locked laser for double exposure and double patterning ArF immersion lithography. (PDF)

2009

- 2009 EUVL Symposium -

• Laser-produced plasma source for EUV lithography. (PDF)
• Present status of laser-produced plasma EUV light source. (PDF)
• Reliability report of high power injection lock laser light source for double exposure and double patterning ArF immersion lithography. (PDF)

- SPIE Advanced Lithography 2009 -

• Laser-produced plasma source development for EUV lithography. (PDF)
• Evaluation at the intermediate focus for EUV Light Source. (PDF)
• Optical performance of laser light source for ArF immersion double patterning lithography tool. (PDF)
• Reliability report of high power injection lock laser light source for double exposure and double patterning ArF immersion lithography. (PDF)

2008

- SPIE Advanced Lithography 2008 -

• CO2 laser-produced Sn-plasma source for high-volume manufacturing EUV lithography, SPIE 6921-29. (PDF)
• Magnetic debris mitigation of a CO2 laser-produced Sn plasma, SPIE 6921-113. (PDF)
• Sn droplet target development for laser produced plasma EUV light source. SPIE 6921-114. (PDF)
• LPP EUV light source employing high power CO2 laser. SPIE 6921-115. (PDF)
• Reliable High Power Injection Locked 6 kHz 60W Laser for ArF Immersion Lithography. SPIE 6924-198. (PDF)
• High-power and high-energy stability injection lock laser light source for double exposure or double patterning ArF immersion lithography. SPIE 6924-199. (PDF)

2007

- SEMATECH EUV Source Workshop 2007 -

• HighPowerCO2Laser_EUVA. (PDF)
• Combined NdYAG -CO2 LPP EUV source examination with the Code Z. (PDF)
• Evaluation of Xe and Sn droplets as LPP targets. (PDF)
• Scaling of short pulse CO2 laser into multi 10kW output power. (PDF)
• EUV Source Supplier update Gigaphoton. (PDF)

- SPIE Advanced Lithography 2007 -

• Laser Produced EUV Light Source Development for HVM, SPIE 6517-23. (PDF)
• Presentation of Laser Produced EUV Light Source Development for HVM, SPIE 6517-23. (PDF)
• Characterization of Various Sn Targets with Respect to Debris and Fast Ion Generation, , SPIE 6517-123. (PDF)
• Small Field Exposure Tool (SFET) Light Source, SPIE 6517-124. (PDF)
• Presentation of Small Field Exposure Tool (SFET) Light Source, SPIE 6517-124. (PDF)
• Ultra line narrowed injection lock laser light source for higher NA ArF immersion lithography tool, SPIE 6520-75. (PDF)
• Presentation of Ultra line narrowed injection lock laser light source for higher NA ArF immersion lithography tool, SPIE 6520-75. (PDF)
• Reliable High Power Injection Locked 6kHz 60W Laser for ArF Immersion Lithography, SPIE 6520-111. (PDF)
• Sn + CO2 Poster, SPIE 6517-122. (PDF)
• Sn Debris Poster, SPIE 6517-123. (PDF)
• GT60A Poster. SPIE 8520-111. (PDF)

2006

• KrF Laser Driven Xenon Plasma Light Source of a Small Field Exposure Tool. (PDF)
• High Power Pulsed CO2 Laser for EUV Lithography. (PDF)
• High Power Injection Lock Laser Platform for ArF Dry/Wet Lithography. (PDF)
• Development of CO2 Laser Produced Xe Plasma EUV Light Source for Microlithography. (PDF)
• High Power Injection Lock 6kHz 60W Laser for ArF Dry/Wet Lithography. (PDF)

2005

• High power injection lock laser platform for ArF dry/wet lithography. (PDF)
• Feasibility Study of a 6kHz ArF excimer laser for 193nm immersionlithography. (PDF)

2004

• High durable 4-kHz ArF excimer laser G42A for sub-90-nm lithography, SPIE, 5377(2004), pp 1727-1734 (PDF)
• Beam quality of a new-type MOPO laser system for VUV laser lithography, SPIE, 5377(2004), pp 1772-1780 (PDF)
• Development of high power ArF/F2 laser platform for VUV microlithography, SPIE, 5377(2004), pp 1805-1814 (PDF)

2003

• Spectral dynamics analysis of ultra-line-narrowed F2 laser, SPIE, 5040(2003), pp 1363-1370 (PDF)
• Ultra line-narrowed ArF excimer laser G42A for sub-90-nm lithography, SPIE, 5040(2003), pp 1704-1711 (PDF)

2002

• Development of a 5 kHz ultra-line-narrowed F2 laser for dioptric projection systems, SPIE, 4691(2002),. pp 652-659 (PDF)
• Spectral metrologies for ultra-line-narrowed F2 laser, SPIE, 4691(2002),. pp 1714-1720 (PDF)

2001

• Spectral measurement of ultra line-narrowed F2 laser SPIE, 4346 (2001), pp 1066-1073 (PDF)
• Long pulse duration of F2 laser for 157nm lithography, SPIE, 4346 (2001) ,pp 1074-1077 (PDF)
• Long run-time performance characteristics of a line-selected 2kHz F2-laser for optical microlithography, SPIE, 4346(2001), pp 1137-1144 (PDF)
• Challenge of the F2 Laser for Dioptric Projection System, SPIE, 4346 (2001), pp 1158-1165 (PDF)
• Ultra-high-repetition-rate ArF excimer laser with long pulse duration?for 193-nm lithography, SPIE, 4346(2001), pp 1210-1218 (PDF)
• Ultra-narrow bandwidth 4-kHz ArF excimer laser for 193-nm lithography, SPIE, 4346(2001), pp 1229-1237 (PDF)
• High-resolution multi grating spectrometer for high quality deep UV light source production, SPIE, 4346 (2001), pp 1254-1261 (PDF)
• Extreme high NA, High throughput scanner compatible 4 kHz KrF excimer laser for DUV lithography, SPIE, 4346(2001), pp 1617-1626 (PDF)

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