Technical Paper

2018

SPIE Laser Damage 2018

 
SPIE Photomask Technology + EUV Lithography 2018

 
International Conference on Extreme Ultraviolet Lithography 2018

 
Optics Express

 
2018 International Workshop on EUV Lithography

 
The 11th Asia-Pacific Laser Symposium

 
SPIE Advanced Lithography 2018

2017

EUV-FEL Workshop

 
Laser Institute of America

 
SEMICON JAPAN 2017

 
IWAPS 2017 (International Workshop on Advanced Patterning Solutions)

 
SPIE Advanced Lithography 2017

2016

SPIE Advanced Lithography 2016

2015

SPIE Advanced Lithography 2015

2014

SPIE Advanced Lithography 2014

2013

SPIE Advanced Lithography 2013

2012

SPIE Advanced Lithography 2012

2011

2011 International Symposia on Extreme Ultraviolet Lithography and Lithography Extensions

 
SPIE Advanced Lithography 2011

  • 100W 1st generation Laser-Produced Plasma source system for HVM EUV lithography < Presentation / Manuscript >
  • Development of the reliable 20 kW Class Pulsed Carbon Dioxide Laser System for LPP EUV Light Source < Presentation / Manuscript >
  • Characterization and Optimization of Tin Particle Mitigation and EUV Conversion Efficiency in a Laser Produced Plasma EUV Light Source < Presentation / Manuscript >
  • Ecology and High Durability Injection Locked Laser with Flexible Power for Double patterning ArF Immersion Lithography < Presentation / Manuscript >

2010

EUV Symposium 2010

 
SPIE Advanced Lithography 2010

2009

2009 EUVL Symposium

 
SPIE Advanced Lithography 2009

2008

SPIE Advanced Lithography 2008

2007

SEMATECH EUV Source Workshop 2007

 
SPIE Advanced Lithography 2007

2006

2005

2004

2003

2002

2001

SPIE Copyright
Copyright 2001-2012 Society of Photo-Optical Instrumentation Engineers. This paper was (will be) published in [add journal or proceedings bibliographic information] and is made available as an electronic reprint (preprint) with permission of SPIE. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.