An Immersion Lithography Light Source That Meets More Stringent Technological Demands
In the manufacturing of state-of-the-art devices, Moore’s Law continues today with the size of technology nodes getting smaller and smaller. Said state-of-the-art devices must meet requirements for lithography patterns transferred to wafers, especially EPE (Edge Placement Error). As a light source, by reducing CD LER/LWR (Line Edge Roughness/Line Width Roughness), which directly affects EPE, the GT66A provides improved yield at mass production sites.
The new immersion lithography light source, the GT66A, has succeeded in reducing speckle contrast by 30% and LER/LWR with a newly developed optical module. We have also extended the module maintenance cycle by 30% by introducing the latest high durability components. This further improves the process yield and improves the availability of the light source, aiding high productivity in the mass production of state-of-the-art nodes.
Improved yield with state-of-the-art nodes
Improved LER and LWR thanks to the newly developed optical module that reduces speckle contrast by 30%. This provides further yield improvements in the mass production of state-of-the-art lithography nodes.
High level of availability
We have extended the module maintenance cycle by 30% by introducing the latest high durability components. This achieves a high level of availability to contribute to improved productivity.
Providing sustainability solutions
Equipped with helium-free technology as standard, the GT66A is an environmentally friendly light source that mitigates the risk of a supply shortage of rare gas and also uses technology to reduce the energy consumption of utilities.
|Output||60 – 90 W|
|Repetition Rate||6,000 Hz|
(95% integral energy – E95)
|300 +/- 1.5 fm wafer average|
|Features||A solution to reduce EPE|
CRI (Continuous Reliability Improvement) Package